Organic light-emitting device

ABSTRACT

An organic light-emitting device having a resonance structure includes a substrate; a first electrode and a second electrode on the substrate and facing each other; an emission layer between the first electrode and the second electrode; a first hole transport layer between the first electrode and the emission layer; and a second hole transport layer between the first hole transport layer and the emission layer. An electron mobility of the second hole transport layer is 5 times to 100 times greater than an electron mobility of the first hole transport layer, and a thickness of the second hole transport layer corresponds to a resonance distance of a wavelength of emission light of the emission layer.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to and the benefit of Korean PatentApplication No. 10-2013-0129558, filed on Oct. 29, 2013, in the KoreanIntellectual Property Office, the entire content of which isincorporated herein by reference.

BACKGROUND

1. Field

One or more aspects according to embodiments of the present disclosurerelate to an organic light-emitting device, for example, an organiclight-emitting device having a microcavity structure or a resonancestructure.

2. Description of the Related Art

Organic light-emitting devices include a material that self-emits lightwhen a voltage is applied thereto, and have high brightness, highcontrast ratios, large viewing angles, high response speeds, and lowdriving voltage, and are capable of producing full-color images.

An organic light-emitting device includes an organic emission layerbetween an anode and a cathode. When voltage is applied, holes from theanode and electrons from the cathode flow into the organic emissionlayer. The holes and electrons move toward the cathode and the anode,respectively, while causing electron-exchange between adjacent moleculesin the organic emission layer. When electrons and holes are re-combinedin a molecule, excitons having an excited state may be formed. When theexcitons return to a ground state, light is emitted. To increaseluminescent efficiency of an organic light-emitting device, an emissionlayer is used together with an electron injection layer, an electrontransport layer, a hole injection layer, a hole transport layer, or thelike.

Organic light-emitting devices may produce full-color images by usingregularly arranged color sub-pixels and microcavity effects. It isbeneficial to improve driving voltage in a structure for usingmicrocavity effects.

SUMMARY

One or more aspects according to embodiments of the present disclosureprovide an organic light-emitting device having a microcavity structurefor the prevention (or reduction) of a decrease in driving voltage.

According to one embodiment, an organic light-emitting device having aresonance structure includes: a substrate; a first electrode and asecond electrode on the substrate and facing each other; an emissionlayer between the first electrode and the second electrode; and a secondhole transport layer between the first hole transport layer and theemission layer; an electron mobility of the second hole transport layerbeing 5 times to 100 times greater than an electron mobility of thefirst hole transport layer, and a thickness of the second hole transportlayer corresponding to a resonance distance of a wavelength of emissionlight of the emission layer.

According to another embodiment, an organic light-emitting deviceincluding a first pixel region, a second pixel region, and a third pixelregion, and having a resonance structure, includes: a substrate; anemission layer between the first electrode and the second electrode andincluding a first emission layer of the first pixel region, a secondemission layer of the second pixel region, and a third emission layer ofthe third pixel region; a first hole transport layer between the firstelectrode and the emission layer; and a second hole transport layerbetween the first hole transport layer and the emission layer andincluding a first pixel-second hole transport layer in the first pixelregion and a second pixel-second hole transport layer in the secondpixel region, an electron mobility of the second hole transport layerbeing 5 times to 100 times greater than an electron mobility of thefirst hole transport layer.

BRIEF DESCRIPTION OF THE DRAWINGS

These and/or other aspects will become apparent and more readilyappreciated by reference to the following description of certainembodiments when considered together with the accompanying drawings inwhich:

FIG. 1 is a schematic cross-sectional view of an organic light-emittingdevice according to an embodiment of the present disclosure;

FIG. 2 is a schematic cross-sectional view of a structure of an organiclight-emitting device according to another embodiment of the presentdisclosure;

FIG. 3 is a schematic cross-sectional view of a structure of an organiclight-emitting device according to another embodiment of the presentdisclosure; and

FIG. 4 is a graph showing hole mobility and electron mobility of a firsthole transport layer material and a second hole transport layer materialin an electric field, which were measured according to the Example andComparative Example.

DETAILED DESCRIPTION

Reference will now be made to certain embodiments, examples of which areillustrated in the accompanying drawings, where like reference numeralsrefer to like elements throughout. As those of ordinary skill in the artwould recognize, the described embodiments may be modified in manydifferent ways and, therefore, should not be construed as limiting.Accordingly, the embodiments are described below, by referring to thefigures, merely to explain aspects of the present disclosure.Expressions such as “at least one of,” when preceding a list ofelements, modify the entire list of elements and do not modify theindividual elements of the list. In the drawings, thicknesses of layersand regions may be exaggerated for illustrative purposes only.Throughout the specification, like reference numerals denote likeelements. Also, in the context of the present application, when a firstelement is referred to as being “on” a second element, it can bedirectly on the second element or be indirectly on the second elementwith one or more intervening elements therebetween.

FIG. 1 is a schematic cross-sectional view of an organic light-emittingdevice 100 according to an embodiment of the present disclosure.

The organic light-emitting device 100 includes a substrate 101, a firstelectrode 111, a hole injection layer 121, a first hole transport layer122, a second hole transport layer 123, an emission layer 125, anelectron transport layer 127, an electron injection layer 128, and asecond electrode 131, which are on one another in the stated order(e.g., they are sequentially formed).

The substrate 101 may be any suitable substrate that is generally usedin an organic light-emitting device according to the related art. Thesubstrate 101 may be a glass or transparent plastic substrate that hasmechanical strength, thermal stability, transparency, surfacesmoothness, ease of handling, and good repellency characteristics (e.g.,good water repellency characteristics). In some embodiments, however,the substrate 101 may instead include (e.g., be formed of) anon-transparent material, such as silicon or stainless steel.

The first electrode 111 may be on (e.g., formed on) the substrate 101.The first electrode 111 may be an anode, and may include (e.g., beformed of) a material that has a relatively high work function. Thefirst electrode 111 may include (e.g., be formed of), for example, atransparent conductive oxide, such as indium tin oxide (ITO), indiumzinc oxide (IZO), zinc oxide (ZnO), Al-doped zinc oxide (AZO), indiumoxide (In₂O₃), or tin oxide (SnO₂), but a material of the firstelectrode 111 is not limited thereto. The first electrode 111 may beformed by deposition or sputtering.

The hole injection layer 121 may be on (e.g., be formed on) the firstelectrode 111. The hole injection layer 121 may include (e.g., be formedof), for example, a phthalocyanine compound, such as copperphthalocyanine,N,N′-diphenyl-N,N′-bis-[4-(phenyl-m-tolyl-amino)-phenyl]-biphenyl-4,4′-diamine(DNTPD), 4,4′,4″-tris(3-methylphenylphenylamino)triphenylamine(m-MTDATA), 4,4′4″-tris(N,N-diphenylamino)triphenylamine (TDATA),4,4′,4″-tris{N,-(2-naphthyl)-N-phenylamino}-triphenylamine (2T-NATA),1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HATCN),poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate) (PEDOT/PSS),polyaniline/dodecylbenzenesulfonic acid (Pani/DBSA), polyaniline/camphorsulfonic acid (Pani/CSA), or polyaniline/poly(4-styrenesulfonate)(PANI/PSS), but the material of the hole injection layer 121 is notlimited thereto.

The hole injection layer 121 may be formed by various suitable methods,such as vacuum deposition, spin coating, casting, langmuir-blodgett (LB)deposition, or the like.

When the hole injection layer 121 is formed by vacuum deposition, thevacuum deposition conditions may be adjusted according to the materialused to form the hole injection layer 121 and the target characteristicsof the hole injection layer 121. For example, the deposition temperaturemay be about 100° C. to about 500° C., the vacuum degree may be about10⁻⁸ Torr to about 10⁻³ Torr, and the deposition speed may be about 0.01Å/sec to about 100 Å/sec.

When the hole injection layer 121 is formed by spin coating, the coatingconditions may vary according to the material used to form the holeinjection layer 121 and the target characteristics of the hole injectionlayer 121. For example, the coating rate may be about 2000 rpm to about5000 rpm, and the temperature at which heat treatment is performed toremove the solvent after coating may be about 80° C. to about 200° C.

A thickness of the hole injection layer 121 may be about 100 Å to about10,000 Å, for example, about 100 Å to about 1,000 Å. When the thicknessof the hole injection layer 121 is within any of the foregoing ranges,satisfactory (or suitable) hole injection characteristics may beobtained without a substantial increase in driving voltage.

In some embodiments, optionally, the hole injection layer 121 may beomitted (e.g., it may not be formed).

The first hole transport layer 122 may be on (e.g., formed on) the holeinjection layer 121. The first hole transport layer 122 may include(e.g., be formed of), for example, a tertiary aryl amine compound, suchas N,N′-bis(3-methylphenyl)-N,N′-diphenyl-[1,1-biphenyl]-4,4′-diamine(TPD), N,N′-di(1-naphthyl)-N,N′-diphenylbenzidine (NPB),N,N′-bis(naphthalen-2-yl)-N,N′-bis(phenyl)-benzidine (β-NPB),4,4′,4″-tris(N-carbazolyl)triphenylamine (TCTA),N,N′-bis(naphthalen-1-yl)-N,N′-bis(phenyl)-2,2′-dimethylbenzidine(α-NPD), 9,9-bis[4-(N,N-bis-naphthalen-2-yl-amino)phenyl]-9H-fluorene(NPAPF), 9,9-bis[4-(N-naphthalen-1-yl-N-phenylamino)-phenyl]-9H-fluorene(NPBAPF), N,N′-bis(phenanthren-9-yl)-N,N′-bis(phenyl)-benzidine (PAPB),di-[4-(N,N-ditolyl-amino)-phenyl]cyclohexane (TAPC),N,N,N′,N′-tetra-naphthalen-2-yl-benzidine (β-TNB),N,N,N′,N′-tetra-(3-methylphenyl)-3,3′-dimethylbenzidine (HMTPD),N,N′-di(naphthalenyl)-N,N′-di(naphthalen-2-yl)-benzidine (α,β-TNB),N,N,N′,N′-tetra-naphthalenyl-benzidine (α-TNB),N,N′-di(naphthalen-2-yl)-N,N′-diphenylbenzene-1,4-diamine (β-NPP),N¹,N⁴-diphenyl-N¹,N⁴-dim-tolylbenzene-1,4-diamine (TTP), orN²,N²,N⁶,N⁶-tetraphenylnaphthalene-2,6-diamine (NDDP), but the firsthole transport layer is not limited thereto.

The hole mobility of the first hole transport layer 122 may be about10⁻⁴ to about 10⁻³ cm²/V·s, and the electron mobility thereof may beabout 5×10⁻⁸ to about 5×10⁻⁶ cm²/V·s.

The first hole injection layer 122 may be formed by various methods,such as vacuum deposition, spin coating, casting, LB deposition, or thelike. When the first hole transport layer 122 is formed by vacuumdeposition or spin coating, the deposition or coating conditions may besimilar to those described above for forming the hole injection layer121, although the deposition or coating conditions may be adjustedaccording to the material that is used to form the first hole transportlayer 122.

A thickness of the first hole injection layer 122 may be about 50 Å toabout 1,000 Å, for example, about 100 Å to about 800 Å. When thethickness of the first hole transport layer 122 is within any of theforegoing ranges, the first hole transport layer 122 may havesatisfactory (or suitable) hole transportation characteristics without asubstantial increase in driving voltage.

The second hole transport layer 123 may be on (e.g., formed on) thefirst hole injection layer 122. The second hole transport layer 123 mayinclude (e.g., be formed of) a dibenzo sulfide derivative compound, butthe second hole transport layer is not limited thereto.

The hole mobility of the second hole transport layer 123 may be about0.5 times to about 2 times greater than the hole mobility of the firsthole transport layer 122, and the electron mobility of the second holetransport layer 123 may be about 5 times to about 100 times greater thanthe electron mobility of the first hole transport layer 122. The holemobility of the second hole transport layer 123 may be about 10 times toabout 1000 times greater than the electron mobility of the second holetransport layer 123. For example, the hole mobility of the second holetransport layer 123 may be about 10⁻⁴ to about 10⁻³ cm²/V·s, and theelectron mobility of the second hole transport layer 123 may be about5×10⁻⁶ to 1×10⁻⁴ cm²/V·s.

The thickness of the second hole transport layer 123 may be adjustedaccording to the emission color to adjust the resonance thickness of amicrocavity. For example, the thickness of the second hole transportlayer may correspond to a resonance distance of a wavelength of theemission light of the emission layer (e.g., the thickness of the secondhole transport layer may be such that light having a wavelength of theemission light resonates in the microcavity). The thickness of thesecond hole transport layer 123 may be, for example, about 200 Å toabout 1,500 Å, or, for example, about 400 Å to about 1,000 Å.

The hole mobility of the second hole transport layer 123 may be similarto that of the first hole transport layer 122, and the electron mobilityof the second hole transport layer 123 may be substantially greater thanthat of the first hole transport layer 122. As used herein, the electronmobility of the second hole transport layer 123 being “substantiallygreater” than that of the first hole transport layer 122 refers to theelectron mobility of the second hole transport layer 123 being about 5times to about 100 times greater than the electron mobility of the firsthole transport layer 122. Accordingly, when the thickness of a holetransport layer is increased to adjust the resonance thickness of themicrocavity, an increase in driving voltage may be prevented (orreduced) due to the increase in electron mobility.

An emission layer (EML) 125 may be on (e.g., formed on) the second holetransport layer 123 by spin coating, casting, or LB deposition. When theEML 125 is formed by vacuum deposition or spin coating, the depositionor coating conditions may be similar to those described above for theformation of the hole injection layer 121, though the conditions fordeposition or coating may be adjusted according to the material that isused to form the EML 125.

As the material for forming the EML 125, at least one material selectedfrom any suitable emission materials (including a host and a dopant)generally used in the art may be used.

The host for use in the EML 125 may include, for example,tris(8-quinolinolate)aluminium (Alq₃),4,4′-bis(N-carbazolyl)-1,1′-biphenyl,4,4′-bis(N-carbazolyl)-1,1′-biphenyl (CBP), poly(n-vinylcarbazole)(PVK), 9,10-di(naphthalene-2-yl)anthracene (ADN),4,4′,4″-tris(carbazol-9-yl)-triphenylamine (TCTA),1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBI),3-tert-butyl-9,10-di(naphth-2-yl) anthracene (TBADN), distyrylarylene(DSA), E3, or 4,4′-bis(9-carbazolyl)-2,2′-dimethyl-biphenyl (CDBP), butthe host is not limited thereto.

The dopant for use in the EML 125 may include any suitable dopantgenerally used in the art. The dopant may include at least one of afluorescent dopant or a phosphorescent dopant. The phosphorescent dopantmay include an organic metallic complex including Ir, Pt, Os, Re, Ti,Zr, Hf, or a combination of at least two of these, but the dopant is notlimited thereto.

The red dopant may include Pt(II) octaethylporphine (PtOEP),tris(2-phenylisoquinoline)iridium (Ir(piq)₃),bis(2-(2′-benzothienyl)-pyridinato-N,C3′)iridium(acetylacetonate)(Btp2Ir(acac)), or2-(2-tert-butyl-6-((E)-2-(2,6,6-trimethyl-2,4,5,6-tetrahydro-1H-pyrrolo[3,2,1-ij]quinolin-8-yl)vinyl)-4H-pyran-4-ylidene)malononitrile(DCQTB), but the red dopant is not limited thereto.

The green dopant may include tris(2-phenylpyridine) iridium (Ir(ppy)₃),bis(2-phenylpyridine)(acetylacetonato)iridium (III) (Ir(ppy)₂(acac)),tris(2-(4-tolyl)phenylpyridine)iridium (Ir(ppy)₃),10-(2-benzothiazolyl)-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H,11H-[1]benzopyrao[6,7,8-ij]-quinolizin-1′-one(C545T), but the green dopant is not limited thereto.

The blue dopant may includebis[3,5-difluoro-2-(2-pyridyl)phenyl](picolinato)iridium(III) (F₂Irpic),(F₂ ppy)₂Ir(tmd), Ir(dfppz)₃, 4,4′-bis(2,2′-diphenylethen-1-yl)biphenyl(DPVBi), 4,4′-bis[4-(diphenylamino)styryl]biphenyl (DPAVBi), or2,5,8,11-tetra-tert-butyl perylene (TBPe), but the blue dopant is notlimited thereto.

When the EML 125 includes a host and a dopant, an amount of the dopantmay be, generally, about 0.01 to about 15 parts by weight based on 100parts by weight of the host, but the amount of the dopant is not limitedthereto.

The thickness of the EML 125 may be about 100 Å to about 1,000 Å, forexample, about 200 Å to about 600 Å. When the thickness of the EML 125is within any of the foregoing ranges, good light-emissioncharacteristics may be obtained without a substantial increase indriving voltage.

When a phosphorescent dopant is used in the EML 125, triplet excitons orholes may diffuse to the electron transport layer. To prevent (orreduce) the diffusion of excitons or holes, a hole blocking layer (HBL)may be between (e.g., formed between) the electron transport layer 127and the EML 125 by vacuum deposition, spin coating, casting, LBdeposition, or the like. When the HBL is formed by vacuum deposition orspin coating, the deposition or coating conditions may be similar tothose discussed above for forming the hole injection layer 121, althoughthe deposition or coating conditions may be adjusted according to thematerial that is used to form the HBL. A material for forming the HBLmay be, for example, an oxadiazole derivative, a triazole derivative, ora phenanthroline derivative, but the material for the HBL is not limitedthereto. For example, BCP may be used to form the HBL.

The thickness of the HBL may be about 50 Å to about 1,000 Å, forexample, about 100 Å to about 300 Å. When the thickness of the HBL iswithin any of the foregoing ranges, the HBL may have good hole blockingcharacteristics without a substantial increase in driving voltage.

The electron transport layer 127 may be on (e.g., formed on) the EML125. The electron transport layer 127 may include (e.g., be formed of),for example, Alq₃, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP),4,7-diphenyl-1,10-phenanthroline (Bphen),3-(4-biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole (TAZ),4-(naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole (NTAZ),2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (tBu-PBD),bis(2-methyl-8-quinolinolato-N1,O8)-(1,1′-biphenyl-4-olato)aluminum(BAlq), beryllium bis(benzoquinolin-10-olate) (Bebq₂), or9,10-di(naphthalene-2-yl)anthracene (ADN), but the material of theelectron transport layer 127 is not limited thereto.

The electron transport layer 127 may be formed by vacuum deposition,spin-coating, or casting. When the electron transport layer 127 isformed by vacuum deposition or spin coating, the deposition or coatingconditions may be similar to those discussed above for forming the holeinjection layer 121, although the deposition or coating conditions maybe adjusted according to the material that is used to form the electrontransport layer 127.

The thickness of the electron transport layer 127 may be about 100 Å toabout 1,000 Å, for example, about 150 Å to about 500 Å. When thethickness of the electron transport layer 127 is within any of theforegoing ranges, the electron transport layer 127 may have satisfactory(or suitable) electron transportation characteristics without asubstantial increase in driving voltage.

Also, the electron transport layer 127 may include an electron transportorganic compound and a metal-containing material. The metal-containingmaterial may include a Li complex. An example of the Li complex islithium quinolate (LiQ), but the Li complex is not limited thereto.

The electron injection layer 128 may be on (e.g., formed on) theelectron transport layer 127. The electron injection layer 128 mayinclude any of various suitable materials that are generally used in theart as a material for forming an electron injection layer, and examplesthereof include LiF, NaCl, CsF, Li2O, and BaO, but the electroninjection layer is not limited thereto. The electron injection layer 128may be formed by, for example, vacuum deposition. A thickness of theelectron injection layer 128 may be about 1 Å to about 100 Å, or about 5Å to about 70 Å. When the thickness of the electron injection layer 128is within any of the foregoing ranges, the electron injection layer 128may have satisfactory (or suitable) electron transportationcharacteristics without a substantial increase in driving voltage.

The electron injection layer 128 may be formed by, for example, vacuumdeposition. A thickness of the electron injection layer 128 may be about1 Å to about 100 Å, or about 5 Å to about 70 Å. When the thickness ofthe electron injection layer 128 is within any of the foregoing ranges,the electron injection layer 128 may have satisfactory (or suitable)electron transportation characteristics without a substantial increasein driving voltage.

In some embodiments, the electron injection layer 128 may be omitted(e.g., not formed), and instead of the electron transport layer 127 andthe electron injection layer 128, an electron functional layer havingelectron transport capabilities and electron injection capabilities maybe included (e.g., formed).

The second electrode 131 may be on (e.g., formed on) the electroninjection layer 128. The second electrode 131 may be a cathode, and mayinclude (e.g., be formed of) a metal, an alloy, an electricallyconductive compound, or a mixture thereof, each of which has a low workfunction, but the second electrode is not limited thereto. The secondelectrode 131 may include (e.g., be formed of), for example, lithium(Li), magnesium (Mg), aluminum (Al), aluminum-lithium (Al—Li), Calcium(Ca), magnesium-indium (Mg—In), or magnesium-silver (Mg—Ag). To obtain atop-emission type light-emitting device, a thin film including (e.g.,formed of) the material may be used as a transmissive electrode, forexample, ITO or IZO may be used to form the transmissive electrode. Thesecond electrode 131 may be formed by, for example, vacuum deposition.The thickness of the second electrode 131 may be, for example, about 20to about 300 Å or about 50 to about 200 Å.

FIG. 2 is a schematic cross-sectional view of an organic light-emittingdevice 200 according to another embodiment of the present disclosure.The organic light-emitting device 200 is a full color organiclight-emitting device that includes a sub-pixel including a red emissionregion (R), a sub-pixel including a green emission region (G), and asub-pixel including a blue emission region (B). The organiclight-emitting device 200 is a bottom emission type light-emittingdevice in which light is emitted through a substrate.

Referring to FIG. 2, the organic light-emitting device 200 includes asubstrate 101, a first electrode 111, a hole injection layer 121, afirst hole transport layer 122, a second hole transport layer 223, anemission layer 225, an electron transport layer 127, an electroninjection layer 128, and a second electrode 131, which are on oneanother in the stated order (e.g., they are sequentially formed in thestated order).

The second hole transport layer 223 includes a red-second hole transportlayer 223R in the red emission region R and a green-second holetransport layer 223G in the green emission region G. The emission layer225 includes a red emission layer 225R in the red emission region R, agreen emission layer 225G in the green emission region G, and a blueemission layer 225B in the blue emission region B.

The substrate 101 is the same as that described above with reference tothe embodiments of FIG. 1.

The first electrode 111 may be an anode, and may include (e.g., beformed of) a material that has a relatively high work function. Becausethe organic light-emitting device 200 is a bottom emission type device,the first electrode 111 may include (e.g., be formed of) a transparentmaterial. The first electrode 111 may include (e.g., be formed of), forexample, a transparent conductive oxide, such as ITO, IZO, ZnO, AZO,In₂O₃, or SnO₂, but the material for forming the first electrode 111 isnot limited thereto.

Materials for forming the hole injection layer 121, the first holetransport layer 122, and the red- and green-second hole transport layers223R and 223G are the same as those described above with reference tothe embodiments of FIG. 1. In some embodiments, the red-second holetransport layer 223R and the green-second hole transport layer 223G mayinclude (e.g., be formed of) identical (or substantially identical)materials.

A thickness of the first hole injection layer 122 may be about 50 Å toabout 1,000 Å, for example, about 100 Å to about 800 Å.

The thickness of the second hole transport layer 223 may be adjustedaccording to the emission region to adjust the resonance thickness ofthe microcavity. In some embodiments, only the red and green emissionregions (R and G) of the organic light-emitting device 200 include asecond hole transport layer. The red-second hole transport layer 223R inthe red emission region R may have a thickness of, for example, about500 Å to about 1,500 Å, and the green-second hole transport layer 223Gin the green emission region G may have a thickness of, for example,about 200 Å to about 1,000 Å.

The emission layer 225 is the same as the EML 125 described withreference to the embodiment of FIG. 1. The electron transport layer 127and the electron injection layer 128 are the same as those describedabove with reference to the embodiments of FIG. 1.

The cathode 131 may be on (e.g., formed on) the electron injection layer128. The cathode 131 may include (e.g., be formed of) a metal, an alloy,an electrically conductive compound, or a mixture thereof, each of whichhas a low work function, but the cathode is not limited thereto. Thecathode 131 may include (e.g., be formed of), for example, lithium (Li),magnesium (Mg), aluminum (Al), aluminum-lithium (Al—Li), potassium (Ca),magnesium-indium (Mg—In), or magnesium-silver (Mg—Ag). The thickness ofthe cathode 131 may be, for example, about 20 to about 300 Å or about 50to about 200 Å.

FIG. 3 is a schematic cross-sectional view of an organic light-emittingdevice 300 according to another embodiment of the present disclosure.The organic light-emitting device 300 is a full color organiclight-emitting device that includes a sub-pixel including a red emissionregion (R), a sub-pixel including a green emission region (G), and asub-pixel including a blue emission region (B). The organic lightemitting device 300 is a top emission type light-emitting device inwhich light is emitted through a second electrode.

Referring to FIG. 3, the organic light-emitting device 300 includes asubstrate 101, a first electrode 311, a hole injection layer 121, afirst hole transport layer 122, a second hole transport layer 223, anemission layer 225, an electron transport layer 127, an electroninjection layer 128, and a second electrode 331, which are on oneanother in the stated order (e.g., they are sequentially formed in thestated order).

The second hole transport layer 223 includes a red-second hole transportlayer 223R in the red emission region R and a green-second holetransport layer 223G in the green emission region G. The emission layer225 includes a red emission layer 225R in the red emission region R, agreen emission layer 225G in the green emission region G, and a blueemission layer 225B in the blue emission region B.

The organic light-emitting device 300 of FIG. 3 is distinguished fromthe organic light-emitting device 200 in that, for example, the organiclight-emitting device 300 is a top emission type light-emitting deviceand the organic light-emitting device 200 is a bottom emission typelight-emitting device.

In FIG. 3, the first electrode 311 may be an anode, and because theorganic light-emitting device 300 is a top emission type light-emittingdevice, the first electrode 311 may be formed of a reflective material.The first electrode 311 may include (e.g., be formed of), for example, areflective metal material, such as Ag, Ag/AgOx, Ag/MnOx, or Ag/CFx, butthe first electrode is not limited thereto. The first electrode 311 maybe a double layer including a reflective film and a transparentconductive film. The reflective film may include, for example, analuminium film, a silver film, an aluminium alloy film, or a silveralloy film, but the reflective film is not limited thereto. Thetransparent conductive film may include (e.g., be formed of), forexample, a transparent conductive oxide, such as ITO, IZO, ZnO, AZO,In₂O₃, or SnO₂, but the transparent conductive film is not limitedthereto.

The substrate 101, the hole injection layer 121, the first holetransport layer 122, the red-second hole transport layer 223R, thegreen-second hole transport layer 223G, the electron transport layer127, and the electron injection layer 128 may be the same as thosedescribed above with reference to the embodiment of FIG. 2.

The second electrode 331 may be on (e.g., formed on) the electroninjection layer 128. The second electrode 331 may be a cathode, andbecause the organic light-emitting device 300 is a top emission typelight-emitting device, the second electrode 331 may include (e.g., beformed of) a transmissive material. The second electrode 331 may include(e.g., be formed of), for example, Mg, Ca, Al, Ag, Ba, or an alloythereof, and may have a thickness that allows light to passtherethrough.

The structures illustrated in FIGS. 2 and 3 are provided forillustration only and the present disclosure is not limited thereto. Forexample, although the red-emission layer 225R in the red emission regionR, the green-emission layer 225G in the green emission region G, and theblue-emission layer 225B in the blue emission region B (illustrated inFIGS. 2 and 3) contact each other, the red-emission layer 225R, thegreen-emission layer 225G, and the blue emission region B may beinsulated (e.g., electrically insulated) from each other. Also, theelectron transport layer 127, the electron injection layer 128, and thesecond electrodes 131 and 331, similarly to the hole injection layer 121or the first hole transport layer 122, may be formed as a common layerwith respect to the respective emission regions.

An organic light-emitting device according to an embodiment of thepresent disclosure may be an organic light-emitting device having asubstrate/anode/hole injection layer/first hole transport layer/secondhole transport layer/emission layer/electron transport layer/electroninjection layer/cathode structure or an organic light-emitting devicehaving a substrate/cathode/electron injection layer/electron transportlayer/emission layer/second hole transport layer/first hole transportlayer/hole injection layer/anode structure. Furthermore, an organiclight-emitting device according to an embodiment of the presentdisclosure may be a top emission type organic light-emitting device or abottom emission type organic light-emitting device. An organiclight-emitting device according to an embodiment of the presentdisclosure may additionally include layers for the injection ortransport of electrons or holes or for the prevention of diffusion ofexcitons (or to reduce the diffusion of excitons).

Hole Mobility and Electron Mobility

FIG. 4 is a graph showing hole mobility and electron mobility of NPB,which may be a first hole transport layer material, anddi(benzo[b]phosphole sulfide) (DBPSB), which may be a second holetransport layer material, in an electric field. In FIG. 4, the holemobility of the second hole transport layer material (DBPSB; shown inFIG. 4 as HTL2 HOLE MOBILITY) is almost similar to the hole mobility ofthe first hole transport layer material (NPB; shown in FIG. 4 as HTL1HOLE MOBILITY), and the electron mobility of the second hole transportlayer material (DBPSB; shown in FIG. 4 as HTL2 ELECTRON MOBILITY) is 10times as high as that of the first hole transport layer material (NPB;shown in FIG. 4 as HTL2 ELECTRON MOBILITY).

Example

A 15 Ω/cm² (1,200 Å thick) ITO layer on a glass substrate, manufacturedby Corning Company, was sonicated by using isopropyl alcohol and purewater for 5 minutes each, and then, washed by exposure to ultravioletozone (i.e., using an ultraviolet ozone generator) for 30 minutes toform the substrate with an anode thereon. HATCN was vacuum deposited onthe ITO glass substrate to form a hole injection layer having athickness of 30 Å, and NPB was vacuum deposited on the hole injectionlayer to form a first hole transport layer having a thickness of 700 Å.Di(benzo[b]phosphole sulfide) (DBPSB) was vacuum deposited on the firsthole transport layer to form a second hole transport layer having athickness of 650 Å. An emission layer having a thickness of 450 Å andincluding 99 wt. % Alq₃ as a red host and 1 wt. % DCQTB as a red dopant,was formed on the second hole transport layer. Alq₃ was vacuum depositedon the emission layer to form an electron transport layer having athickness of 250 Å. LiF was vacuum deposited on the electron transportlayer to form an electron injection layer having a thickness of 20 Å,and then, Al was vacuum deposited thereon to form a cathode having athickness of 1000 Å, thereby manufacturing an organic light-emittingdevice.

Comparative Example

An organic light-emitting device was manufactured as in the Exampleexcept that the first hole transport layer was formed to have athickness of 1,350 Å, and the second hole transport layer was notformed.

Measurement

Table 1 shows driving voltages, instantaneous brightness, instantaneousefficiency, and power efficiency of the organic light-emitting devicesmanufactured according to the Example and Comparative Example, whichwere measured at a current density of 1000 mA/cm².

TABLE 1 Instan- Instan- Driving taneous taneous Power voltage brightnessefficiency efficiency (V) [cd/m²] (cd/A) [lm/W] CIEx CIEy Example 7.4106,700 10.7 4.5 0.666 0.333 Comparative 8.1 109,400 10.9 4.2 0.6670.331 Example

The organic light-emitting device of the Example is almost equivalent tothe organic light-emitting device of the Comparative Example in terms ofinstantaneous brightness and instantaneous efficiency, while the drivingvoltage of the organic light-emitting device of the Example was lowerthan that of the organic light-emitting device of the ComparativeExample by 0.7 V.

According to embodiments of the present disclosure, a material havinghigh electron mobility is included in (e.g., used in forming) a holetransport layer to adjust a resonance distance in a microcavitystructure to increase mobility of electrons in a device including thehole transport layer, thereby leading to a decrease in a driving voltageof the device.

It should be understood that the embodiments described herein should beconsidered in a descriptive sense only and not for purposes oflimitation. Descriptions of features or aspects within each embodimentshould typically be considered as available for other similar featuresor aspects in other embodiments.

While certain embodiments of the present disclosure have been describedwith reference to the figures, it will be understood by those ofordinary skill in the art that various changes may be made the disclosedembodiments without departing from the spirit and scope of the presentinvention as defined by the following claims, and equivalents thereof.

What is claimed is:
 1. An organic light-emitting device having aresonance structure, the organic light-emitting device comprising: asubstrate; a first electrode and a second electrode on the substrate andfacing each other; an emission layer between the first electrode and thesecond electrode; a first hole transport layer between the firstelectrode and the emission layer; and a second hole transport layerbetween the first hole transport layer and the emission layer, thesecond hole transport layer comprising a dibenzo sulfide derivative, anelectron mobility of the second hole transport layer being 5 times to100 times greater than an electron mobility of the first hole transportlayer, and a thickness of the second hole transport layer correspondingto a resonance distance of a wavelength of emission light of theemission layer.
 2. The organic light-emitting device of claim 1, whereina hole mobility of the second hole transport layer is 0.5 times to 2times greater than a hole mobility of the first hole transport layer. 3.The organic light-emitting device of claim 1, wherein a hole mobility ofthe second hole transport layer is 10 times to 1,000 times greater thanthe electron mobility of the second hole transport layer.
 4. The organiclight-emitting device of claim 3, wherein the first hole transport layercomprisesN,N′-bis(3-methylphenyl)-N,N′-diphenyl-[1,1-biphenyl]-4,4′-diamine(TPD), N,N′-di(1-naphthyl)-N,N′-diphenylbenzidine (NPB),N,N′-bis(naphthalen-2-yl)-N,N′-bis(phenyl)-benzidine (β-NPB),4,4′,4″-tris(N-carbazolyl)triphenylamine (TCTA),N,N′-bis(naphthalen-1-yl)-N,N′-bis(phenyl)-2,2′-dimethylbenzidine(α-NPD), 9,9-bis[4-(N,N-bis-naphthalen-2-yl-amino)phenyl]-9H-fluorene(NPAPF), 9,9-bis[4-(N-naphthalen-1-yl-N-phenylamino)-phenyl]-9H-fluorene(NPBAPF), N,N′-bis(phenanthren-9-yl)-N,N′-bis(phenyl)-benzidine (PAPB),di-[4-(N,N-ditolyl-amino)-phenyl]cyclohexane (TAPC),N,N,N′,N′-tetra-naphthalen-2-yl-benzidine (β-TNB),N,N,N′,N′-tetra-(3-methylphenyl)-3,3′-dimethylbenzidine (HMTPD),N,N′-di(naphthalenyl)-N,N′-di(naphthalen-2-yl)-benzidine (α,β-TNB),N,N,N′,N′-tetra-naphthalenyl-benzidine (α-TNB),N,N′-di(naphthalen-2-yl)-N,N′-diphenylbenzene-1,4-diamine (β-NPP),N¹,N⁴-diphenyl-N¹,N⁴-dim-tolylbenzene-1,4-diamine (TTP), orN²,N²,N⁶,N⁶-tetraphenylnaphthalene-2,6-diamine (NDDP).
 5. The organiclight-emitting device of claim 1, further comprising an electrontransport layer between the emission layer and the second electrode, andan electron injection layer between the electron transport layer and thesecond electrode.
 6. The organic light-emitting device of claim 1,further comprising a hole injection layer between the first electrodeand the first hole transport layer.
 7. An organic light-emitting devicehaving a resonance structure, the organic light-emitting devicecomprising: a substrate; a first electrode and a second electrode on thesubstrate and facing each other; an emission layer between the firstelectrode and the second electrode; a first hole transport layer betweenthe first electrode and the emission layer; and a second hole transportlayer between the first hole transport layer and the emission layer, thesecond hole transport layer comprising di(benzo[b]phosphole sulfide)(DBPSB), an electron mobility of the second hole transport layer being 5times to 100 times greater than an electron mobility of the first holetransport layer, and a thickness of the second hole transport layercorresponding to a resonance distance of a wavelength of emission lightof the emission layer.
 8. An organic light-emitting device comprising afirst pixel region, a second pixel region, and a third pixel region, andhaving a resonance structure, the organic light-emitting devicecomprising: a substrate; a first electrode and a second electrode on thesubstrate and facing each other; an emission layer between the firstelectrode and the second electrode and comprising a first emission layerin the first pixel region, a second emission layer in the second pixelregion, and a third emission layer in the third pixel region; a firsthole transport layer between the first electrode and the emission layer;and a second hole transport layer between the first hole transport layerand the emission layer, the second hole transport layer comprising adibenzo sulfide derivative, and comprising a first pixel-second holetransport layer in the first pixel region and a second pixel-second holetransport layer in the second pixel region, an electron mobility of thesecond hole transport layer being 5 times to 100 times greater than anelectron mobility of the first hole transport layer.
 9. The organiclight-emitting device of claim 8, wherein a hole mobility of the secondhole transport layer is 0.5 times to 2 times greater than a holemobility of the first hole transport layer.
 10. The organiclight-emitting device of claim 8, wherein a hole mobility of the secondhole transport layer is 10 times to 1000 times as high as an electronmobility of the second hole transport layer.
 11. The organiclight-emitting device of claim 8, wherein the first hole transport layercomprisesN,N′-bis(3-methylphenyl)-N,N′-diphenyl-[1,1-biphenyl]-4,4′-diamine(TPD), N,N′-di(1-naphthyl)-N,N′-diphenylbenzidine (NPB),N,N′-bis(naphthalen-2-yl)-N,N′-bis(phenyl)-benzidine (β-NPB),4,4′,4″-tris(N-carbazolyl)triphenylamine (TCTA),N,N′-bis(naphthalen-1-yl)-N,N′-bis(phenyl)-2,2′-dimethylbenzidine(α-NPD), 9,9-bis[4-(N,N-bis-naphthalen-2-yl-amino)phenyl]-9H-fluorene(NPAPF), 9,9-bis[4-(N-naphthalen-1-yl-N-phenylamino)-phenyl]-9H-fluorene(NPBAPF), N,N′-bis(phenanthren-9-yl)-N,N′-bis(phenyl)-benzidine (PAPB),di-[4-(N,N-ditolyl-amino)-phenyl]cyclohexane (TAPC),N,N,N′,N′-tetra-naphthalen-2-yl-benzidine (β-TNB),N,N,N′,N′-tetra-(3-methylphenyl)-3,3′-dimethylbenzidine (HMTPD),N,N′-di(naphthalenyl)-N,N′-di(naphthalen-2-yl)-benzidine (α,β-TNB),N,N,N′,N′-tetra-naphthalenyl-benzidine (α-TNB),N,N′-di(naphthalen-2-yl)-N,N′-diphenylbenzene-1,4-diamine (β-NPP),N¹,N⁴-diphenyl-N¹,N⁴-dim-tolylbenzene-1,4-diamine (TTP), orN²,N²,N⁶,N⁶-tetraphenylnaphthalene-2,6-diamine (NDDP).
 12. The organiclight-emitting device of claim 8, wherein the first pixel region is ared emission pixel region, the second pixel region is a green emissionpixel region, and the third pixel region is a blue emission pixelregion.
 13. The organic light-emitting device of claim 8, wherein athickness of the first pixel-second hole transport layer corresponds toa resonance distance of a wavelength of emission light of the firstpixel region, and a thickness of the second pixel-second hole transportlayer corresponds to a resonance distance of a wavelength of emissionlight of the second pixel region.
 14. The organic light-emitting deviceof claim 8, wherein the first electrode is a transmissive electrode andthe second electrode is a reflective electrode.
 15. The organiclight-emitting device of claim 8, wherein the first electrode is areflective electrode and the second electrode is a transmissiveelectrode.
 16. The organic light-emitting device of claim 8, furthercomprising an additional layer between the emission layer and the secondelectrode, the additional layer being selected from the group consistingof an electron transport layer, an electron injection layer, an electronfunctional layer having an electron injection capability and an electrontransport capability, and combinations thereof.
 17. An organiclight-emitting device comprising a first pixel region, a second pixelregion, and a third pixel region, and having a resonance structure, theorganic light-emitting device comprising: a substrate; a first electrodeand a second electrode on the substrate and facing each other; anemission layer between the first electrode and the second electrode andcomprising a first emission layer in the first pixel region, a secondemission layer in the second pixel region, and a third emission layer inthe third pixel region; a first hole transport layer between the firstelectrode and the emission layer; and a second hole transport layerbetween the first hole transport layer and the emission layer, thesecond hole transport layer comprising di(benzo[b]phosphole sulfide),and comprising a first pixel-second hole transport layer in the firstpixel region and a second pixel-second hole transport layer in thesecond pixel region, an electron mobility of the second hole transportlayer being 5 times to 100 times greater than an electron mobility ofthe first hole transport layer.